ATP301 - P-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)=57mΩ (typ. ).
10V drive.
Input capacitance Ciss=4000pF (typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=.

ATP301 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ATP301
Manufacturer	onsemi
File Size	259.99 KB
Description	P-Channel Power MOSFET
Datasheet	ATP301 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
ATP301	P-Channel Silicon MOSFET	Sanyo Semicon Device
ATP302	P-Channel Silicon MOSFET	Sanyo Semicon Device
ATP350G01	Standard LCD	Kentec Electronics
ATP-SM	Standard Crystals	CTS Corporation
ATP0574-1	SPECIFICATIONS FOR STANDARD RESISITIVE TOUCH PANEL	AZ Displays

Other Datasheets by onsemi

Part Number	Description
ATP302	P-Channel Power MOSFET
ATP304	P-Channel Power MOSFET
ATP101	P-Channel Power MOSFET
ATP103	P-Channel Power MOSFET
ATP104	P-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

Ordering number : ENA1457A ATP301 P-Channel Power MOSFET –100V, –28A, 75mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)=57mΩ (typ.) • 10V drive • Input capacitance Ciss=4000pF (typ.