ATP302 - P-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)1=10mΩ (typ. ).
4.5V drive.
Input capacitance Ciss=5400pF (typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VD.

ATP302 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ATP302
Manufacturer	onsemi
File Size	261.18 KB
Description	P-Channel Power MOSFET
Datasheet	ATP302 Datasheet

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Full PDF Text Transcription (Reference)

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Ordering number : ENA1654A ATP302 P-Channel Power MOSFET –60V, –70A, 13mΩ, ATPAK http://onsemi.com Features • ON-resistance RDS(on)1=10mΩ (typ.) • 4.5V drive • Input capacitance Ciss=5400pF (typ.