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  ON Semiconductor Electronic Components Datasheet  

BAS16DXV6T1G Datasheet

Dual Switching Diode

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BAS16DXV6
Dual Switching Diode
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (TA = 25°C)
Rating
Symbol
Max
Unit
Continuous Reverse Voltage
VR
100
V
Recurrent Peak Forward Current
IF
200
mA
Peak Forward Surge Current
Pulse Width = 10 ms
IFM(surge)
500
mA
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol
Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
357
mW
2.9
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
350
°C/W
Characteristic
(Both Junctions Heated)
Symbol
Max
Unit
Total Device Dissipation (Note 1)
TA = 25°C
Derate above 25°C
PD
500
mW
4.0
mW/°C
Thermal Resistance,
Junction-to-Ambient (Note 1)
RqJA
250
°C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad
www.onsemi.com
6
1
4
3
654
12 3
SOT−563
CASE 463A
PLASTIC
MARKING DIAGRAM
A6 MG
G
A6 = Specific Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package Shipping
BAS16DXV6T1G
SOT−563 4000 / Tape &
(Pb−Free)
Reel
SBAS16DXV6T1G SOT−563 4000 / Tape &
(Pb−Free)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
August, 2015 − Rev. 5
Publication Order Number:
BAS16DXV6/D


  ON Semiconductor Electronic Components Datasheet  

BAS16DXV6T1G Datasheet

Dual Switching Diode

No Preview Available !

BAS16DXV6
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
VF
mV
715
855
1000
1250
Reverse Current
(VR = 100 V)
(VR = 75 V, TJ = 150°C)
(VR = 25 V, TJ = 150°C)
Capacitance
(VR = 0, f = 1.0 MHz)
IR
mA
1.0
50
30
CD
2.0
pF
Reverse Recovery Time
(IF = IR = 10 mA, RL = 50 W) (Figure 1)
trr
6.0
ns
Stored Charge
(IF = 10 mA to VR = 6.0 V, RL = 500 W) (Figure 2)
QS
45
PC
Forward Recovery Voltage
(IF = 10 mA, tr = 20 ns) (Figure 3)
VFR
1.75
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2


Part Number BAS16DXV6T1G
Description Dual Switching Diode
Maker ON Semiconductor
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BAS16DXV6T1G Datasheet PDF






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