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  ON Semiconductor Electronic Components Datasheet  

BAT54H Datasheet

Schottky Barrier Diodes

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BAT54H
Schottky Barrier Diodes
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
Device Marking: JV
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol Value
Unit
Reverse Voltage
VR 30 V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR−5 Board,
(Note 1)
TA = 25°C
Derate above 25°C
Forward Current (DC)
Non−Repetitive Peak Forward Current,
tp < 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec, Duty Cycle = 66%
Thermal Resistance
Junction−to−Ambient
Junction and Storage Temperature Range
1. FR−4 Minimum Pad
Symbol
PD
IF
IFSM
IFRM
RqJA
TJ, Tstg
Max
200
1.57
200
Max
600
300
635
−55
to150
Unit
mW
mW/°C
mA
mA
mA
°C/W
°C
www.onsemi.com
30 VOLT SILICON
HOT−CARRIER DETECTOR
AND SWITCHING DIODES
SOD−323
CASE 477
STYLE 1
1
CATHODE
2
ANODE
MARKING DIAGRAM
JVM G
1 G2
JV = Device Code
M = Date Code
G = Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BAT54HT1G
NSVBAT54HT1G
Package
SOD−323
(Pb−Free)
SOD−323
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 7
1
Publication Order Number:
BAT54HT1/D


  ON Semiconductor Electronic Components Datasheet  

BAT54H Datasheet

Schottky Barrier Diodes

No Preview Available !

BAT54H
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 μA)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc) Figure 1
trr
Min
30
Typ
7.6
0.5
0.22
0.29
0.35
0.41
0.52
Max Unit
V
pF
10
μAdc
2.0
V
0.24
0.32
0.40
0.50
0.80
ns
5.0
820 Ω
+10 V
2k
100 μH
0.1 μF
IF
0.1 μF
tr tp
10%
t
IF
trr t
50 Ω Output
Pulse
Generator
DUT
50 Ω Input
Sampling
Oscilloscope
90%
VR
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2


Part Number BAT54H
Description Schottky Barrier Diodes
Maker ON Semiconductor
Total Page 4 Pages
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