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  ON Semiconductor Electronic Components Datasheet  

BAT54W Datasheet

Schottky Barrier Diodes

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BAT54W
Schottky Barrier Diode
These Schottky barrier diodes are designed for high speed switching
applications, circuit protection, and voltage clamping. Extremely low
forward voltage reduces conduction loss. Miniature surface mount
package is excellent for hand held and portable applications where
space is limited.
Features
Extremely Fast Switching Speed
Extremely Low Forward Voltage − 0.35 V (Typ) @ IF = 10 mAdc
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS (TJ = 125°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
VR 30 V
PF
200 mW
1.6 mW/°C
Forward Current (DC)
Non−Repetitive Peak Forward
Current,
tp < 10 msec
Repetitive Peak Forward Current
Pulse Wave = 1 sec,
Duty Cycle = 66%
IF
IFSM
IFRM
200 Max
600
300
mA
mA
mA
Junction Temperature
TJ
−55 to 125
°C
Storage Temperature Range
Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
www.onsemi.com
30 VOLT
SCHOTTKY BARRIER
DETECTOR AND SWITCHING
DIODE
SOT−323
CASE 419
STYLE 2
3
CATHODE
1
ANODE
MARKING DIAGRAM
B4M G
G
1
B4 = Device Code
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending up-
on manufacturing location.
ORDERING INFORMATION
Device
BAT54WT1G
NSVBAT54WT1G
Package
SOT−323
(Pb−Free)
SOT−323
(Pb−Free)
Shipping
3,000 /
Tape & Reel
3,000 /
Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2014
December, 2014 − Rev. 11
1
Publication Order Number:
BAT54WT1/D


  ON Semiconductor Electronic Components Datasheet  

BAT54W Datasheet

Schottky Barrier Diodes

No Preview Available !

BAT54W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Reverse Breakdown Voltage
(IR = 10 mA)
V(BR)R
Total Capacitance
(VR = 1.0 V, f = 1.0 MHz)
CT
Reverse Leakage
(VR = 25 V)
IR
Forward Voltage
(IF = 0.1 mA)
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 30 mA)
(IF = 100 mA)
VF
Reverse Recovery Time
(IF = IR = 10 mAdc, IR(REC) = 1.0 mAdc, Figure 1)
trr
Min
30
Typ
7.6
0.5
0.22
0.29
0.35
0.41
0.52
Max Unit
V
pF
10
mAdc
2.0
V
0.24
0.32
0.40
0.50
0.80
ns
5.0
820 W
+10 V
2k
100 mH
0.1 mF
IF
0.1 mF
tr tp
10%
T
IF
trr T
50 W OUTPUT
PULSE
GENERATOR
DUT
50 W INPUT
SAMPLING
OSCILLOSCOPE
VR
90%
INPUT SIGNAL
iR(REC) = 1 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; measured
at iR(REC) = 1 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2


Part Number BAT54W
Description Schottky Barrier Diodes
Maker ON Semiconductor
Total Page 4 Pages
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