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  ON Semiconductor Electronic Components Datasheet  

BAV23CLT1G Datasheet

Dual High Voltage Common Cathode Switching Diode

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Switching Diode, Dual, High
Voltage, Common Cathode
BAV23CL, NSVBAV23CL
Features
Moisture Sensitivity Level: 1
ESD Rating Human Body Model: Class 2
ESD Rating Machine Model: Class C
Fast Switching Speed
Switching Application
NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AECQ101
Qualified and PPAP Capable
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
LCD TV
Power Supply
Industrial
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Continuous Reverse Voltage
VR
250
V
Repetitive Peak Reverse Voltage
VRRM
250
V
Peak Forward Current
IF
400
mA
NonRepetitive Peak
@ t = 1.0 ms IFSM
9.0
A
Forward Surge Current @ t = 100 ms
3.0
@ t = 10 ms
1.7
Peak Forward Surge Current
IFM(surge)
625
NonRepetitive Peak
Per Human Body Model HBM
4.0
Per Machine Model MM
400
mAdc
kV
V
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
3
CATHODE
ANODE
1
2
ANODE
3
1
2
SOT23
CASE 318
STYLE 9
MARKING DIAGRAM
3
AA MG
G
1
2
AA
= Specific Device Code
M
= Date Code
G
= PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
Package
Shipping
BAV23CLT1G
SOT23 3000 / Tape &
(PbFree)
Reel
BAV23CLT3G
SOT23 10000 / Tape &
(PbFree)
Reel
NSVBAV23CLT1G SOT23 3000 / Tape &
(PbFree)
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2008
1
April, 2020 Rev. 4
Publication Order Number:
BAV23CLT1/D


  ON Semiconductor Electronic Components Datasheet  

BAV23CLT1G Datasheet

Dual High Voltage Common Cathode Switching Diode

No Preview Available !

BAV23CL, NSVBAV23CL
THERMAL CHARACTERISTICS
Characteristic
SINGLE HEATED
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, JunctiontoAmbient (Note 1)
Thermal Reference, JunctiontoAnode Lead (Note 1)
Thermal Reference, JunctiontoCase (Note 1)
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, JunctiontoAmbient (Note 2)
Thermal Reference, JunctiontoAnode Lead (Note 2)
Thermal Reference, JunctiontoCase (Note 2)
DUAL HEATED (Note 3)
Total Device Dissipation (Note 1) TA = 25°C
Derate above 25°C
Thermal Resistance, JunctiontoAmbient (Note 1)
Thermal Reference, JunctiontoAnode Lead (Note 1)
Thermal Reference, JunctiontoCase (Note 1)
Total Device Dissipation (Note 2) TA = 25°C
Derate above 25°C
Thermal Resistance, JunctiontoAmbient (Note 2)
Thermal Reference, JunctiontoAnode Lead (Note 2)
Thermal Reference, JunctiontoCase (Note 2)
Junction and Storage Temperature Range
1. FR-4 @ 100 mm2, 1 oz. copper traces, still air.
2. FR-4 @ 500 mm2, 2 oz. copper traces, still air.
3. Dual heated values assume total power is sum of two equally powered channels
Symbol
PD
RqJA
R_ψJL
R_ψJC
PD
RqJA
R_ψJL
R_ψJC
PD
RqJA
R_ψJL
R_ψJC
PD
RqJA
R_ψJL
R_ψJC
TJ, Tstg
Max
265
2.1
472
263
289
345
2.7
362
251
250
390
3.1
321
159
138
540
4.3
231
148
119
55 to +150
Unit
mW
mW/°C
°C/W
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
°C/W
mW
mW/°C
°C/W
°C/W
°C/W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Voltage Leakage Current
(VR = 200 Vdc)
(VR = 200 Vdc, TJ = 150°C)
IR
mAdc
0.1
100
Reverse Breakdown Voltage
(IBR = 100 mAdc)
V(BR)
250
Vdc
Forward Voltage
(IF = 100 mAdc)
(IF = 200 mAdc)
VF
mV
1000
1250
Diode Capacitance
(VR = 0, f = 1.0 MHz)
CT
5.0
pF
Reverse Recovery Time
(IF = IR = 30 mAdc, RL = 100 W)
trr
150
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2


Part Number BAV23CLT1G
Description Dual High Voltage Common Cathode Switching Diode
Maker ON Semiconductor
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