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  ON Semiconductor Electronic Components Datasheet  

BAV70M3T5G Datasheet

Dual Switching Diode Common Cathode

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BAV70M3
Dual Switching Diode
Common Cathode
The BAV70M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for switching applications and is
housed in the SOT−723 surface mount package. This device is ideal
for low−power surface mount applications where board space is at a
premium.
Features
Reduces Board Space
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage
VR
100
Vdc
Forward Current
Peak Forward Surge Current
THERMAL CHARACTERISTICS
IF
200
IFM(surge) 500
mAdc
mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation
FR− 5 Board (Note 1)
TA = 25°C
Derate above 25°C
PD
mW
265
mW/°C
2.1
Thermal Resistance,
Junction−to−Ambient
RqJA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) TA = 25°C
Derate above 25°C
PD
640
mW
5.1 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
195 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to
°C
+150
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0  0.75  0.062 in.
2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.
www.onsemi.com
70 V
DUAL COMMON CATHODE
SWITCHING DIODES
1
ANODE
3
CATHODE
2
ANODE
MARKING
DIAGRAM
3
SOT−723
CASE 631AA
AL M
2
STYLE 3
1
1
AL = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
Package
Shipping
BAV70M3T5G
SOT−723 8000/Tape & Reel
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
1
April, 2015 − Rev. 2
Publication Order Number:
BAV70M3/D


  ON Semiconductor Electronic Components Datasheet  

BAV70M3T5G Datasheet

Dual Switching Diode Common Cathode

No Preview Available !

BAV70M3
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)
Characteristic
Symbol
Min
Max
Unit
Reverse Breakdown Voltage
(I(BR) = 100 mA)
V(BR)
100
V
Reverse Voltage Leakage Current (Note 3)
IR
mA
(VR = 25 V, TJ = 150°C)
60
(VR = 100 V)
1.0
(VR = 70 V, TJ = 150°C)
100
Diode Capacitance
(VR = 0 V, f = 1.0 MHz)
CD
1.5
pF
Forward Voltage
(IF = 1.0 mA)
(IF = 10 mA)
(IF = 50 mA)
(IF = 150 mA)
Reverse Recovery Time
(IF = IR = 10 mA, IR(REC) = 1.0 mA) (Figure 1)
RL = 100 W
3. For each individual diode while second diode is unbiased.
VF
mV
715
855
1000
1250
trr
6.0
ns
820 W
+10 V
2.0 k
100 mH IF
0.1 mF
50 W OUTPUT
PULSE
GENERATOR
D.U.T.
0.1 mF
tr
tp
t
10%
50 W INPUT
SAMPLING
VR
OSCILLOSCOPE
90%
INPUT SIGNAL
IF
trr
t
iR(REC) = 1.0 mA
IR
OUTPUT PULSE
(IF = IR = 10 mA; MEASURED
at iR(REC) = 1.0 mA)
Notes: 1. A 2.0 kW variable resistor adjusted for a Forward Current (IF) of 10 mA.
Notes: 2. Input pulse is adjusted so IR(peak) is equal to 10 mA.
Notes: 3. tp » trr
Figure 1. Recovery Time Equivalent Test Circuit
www.onsemi.com
2


Part Number BAV70M3T5G
Description Dual Switching Diode Common Cathode
Maker ON Semiconductor
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