BBL4001 - N-Channel Power MOSFET

Datasheet Summary

Features

ON-resistance RDS(on)1=4.7mΩ(typ. ).
Input capacitance Ciss=6,900pF(typ. ).
4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=30V, L=100μH, IAV=65A(Fig.1).

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Datasheet Details

Part number	BBL4001
Manufacturer	ON Semiconductor
File Size	80.67 KB
Description	N-Channel Power MOSFET
Datasheet	BBL4001 Datasheet
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Ordering number : ENA1356A BBL4001 N-Channel Power MOSFET 60V, 74A, 6.1mΩ, TO-220F-3SG http://onsemi.com Features • ON-resistance RDS(on)1=4.7mΩ(typ.) • Input capacitance Ciss=6,900pF(typ.) • 4V drive Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) VDSS VGSS ID IDP Allowable Power Dissipation PD Junction Temperature Tj Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=30V, L=100μH, IAV=65A(Fig.1) *2 L≤100μH, Single pulse Conditions PW≤10μs, duty cycle≤1% Tc=25°C TO-220F-3SG Ratings 60 ±20 74 296 2.

Published: Jan 24, 2016 |