BBS3002 - P-Channel Power MOSFET

ON Semiconductor

Datasheet Details

ON-resistance RDS(on)1=4.4mΩ (typ. ).
Input capacitance Ciss=13200pF (typ. ).
4V drive TO-263 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=.
30V, L=100μH, I.

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