BBS3002 - P-Channel Power MOSFET

Features

ON-resistance RDS(on)1=4.4mΩ (typ. ).
Input capacitance Ciss=13200pF (typ. ).
4V drive TO-263 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse).
1 EAS Avalanche Current.
2 IAV Note :.
1 VDD=--30V, L=100μH, IAV=--60.

ON Semiconductor

Datasheet Details

Part number	BBS3002
Manufacturer	ON Semiconductor
File Size	190.89 KB
Description	P-Channel Power MOSFET
Datasheet	BBS3002 Datasheet
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Ordering number : ENA1357C BBS3002 P-Channel Power MOSFET –60V, –100A, 5.8mΩ, TO-263-2L/TO-263 http://onsemi.com Features • ON-resistance RDS(on)1=4.4mΩ (typ.) • Input capacitance Ciss=13200pF (typ.) • 4V drive TO-263 Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Avalanche Energy (Single Pulse) *1 EAS Avalanche Current *2 IAV Note :*1 VDD=--30V, L=100μH, IAV=--60A (Fig.

Published: Aug 23, 2015 |