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  ON Semiconductor Electronic Components Datasheet  

BC546 Datasheet

Amplifier Transistors

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BC546B, BC547A, B, C,
BC548B, C
Amplifier Transistors
NPN Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
Symbol
BC546
BC547
BC548
VCEO
Value
65
45
30
Unit
Vdc
Collector - Base Voltage
BC546
BC547
BC548
VCBO
80
50
30
Vdc
Emitter - Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VEBO
IC
PD
6.0 Vdc
100 mAdc
625 mW
5.0 mW/°C
Total Device Dissipation @ TC = 25°C PD 1.5 W
Derate above 25°C
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA
200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2012
June, 2012 Rev. 7
1
http://onsemi.com
COLLECTOR
1
2
BASE
3
EMITTER
TO92
CASE 29
STYLE 17
123
STRAIGHT LEAD
12 3
BENT LEAD
TAPE & REEL
MARKING DIAGRAM
BC
54xy
AYWW G
G
x = 6, 7, or 8
y = A, B or C
A = Assembly Location
Y = Year
WW = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
BC546/D


  ON Semiconductor Electronic Components Datasheet  

BC546 Datasheet

Amplifier Transistors

No Preview Available !

BC546B, BC547A, B, C, BC548B, C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage
(IC = 1.0 mA, IB = 0)
BC546
BC547
BC548
Collector Base Breakdown Voltage
(IC = 100 mAdc)
BC546
BC547
BC548
Emitter Base Breakdown Voltage
(IE = 10 mA, IC = 0)
BC546
BC547
BC548
Collector Cutoff Current
(VCE = 70 V, VBE = 0)
(VCE = 50 V, VBE = 0)
(VCE = 35 V, VBE = 0)
(VCE = 30 V, TA = 125°C)
ON CHARACTERISTICS
BC546
BC547
BC548
BC546/547/548
DC Current Gain
(IC = 10 mA, VCE = 5.0 V)
BC547A
BC546B/547B/548B
BC548C
(IC = 2.0 mA, VCE = 5.0 V)
BC546
BC547
BC548
BC547A
BC546B/547B/548B
BC547C/BC548C
(IC = 100 mA, VCE = 5.0 V)
BC547A/548A
BC546B/547B/548B
BC548C
Collector Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
(IC = 100 mA, IB = 5.0 mA)
(IC = 10 mA, IB = See Note 1)
Base Emitter Saturation Voltage
(IC = 10 mA, IB = 0.5 mA)
Base Emitter On Voltage
(IC = 2.0 mA, VCE = 5.0 V)
(IC = 10 mA, VCE = 5.0 V)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mA, VCE = 5.0 V, f = 100 MHz)
BC546
BC547
BC548
Output Capacitance
(VCB = 10 V, IC = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 V, IC = 0, f = 1.0 MHz)
Small Signal Current Gain
(IC = 2.0 mA, VCE = 5.0 V, f = 1.0 kHz)
BC546
BC547/548
BC547A
BC546B/547B/548B
BC547C/548C
Noise Figure (IC = 0.2 mA, VCE = 5.0 V, RS = 2 kW, f = 1.0 kHz, Df = 200 Hz)
BC546
BC547
BC548
1. IB is value for which IC = 11 mA at VCE = 1.0 V.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICES
hFE
VCE(sat)
VBE(sat)
VBE(on)
fT
Cobo
Cibo
hfe
NF
http://onsemi.com
2
Min
65
45
30
80
50
30
6.0
6.0
6.0
110
110
110
110
200
420
0.55
150
150
150
125
125
125
240
450
Typ
0.2
0.2
0.2
90
150
270
180
290
520
120
180
300
0.09
0.2
0.3
0.7
300
300
300
1.7
10
220
330
600
2.0
2.0
2.0
Max Unit
V
V
V
15 nA
15
15
4.0 mA
450
800
800
220
450
800
V
0.25
0.6
0.6
V
V
0.7
0.77
MHz
4.5 pF
pF
500
900
260
500
900
dB
10
10
10


Part Number BC546
Description Amplifier Transistors
Maker ON Semiconductor
PDF Download

BC546 Datasheet PDF






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