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  ON Semiconductor Electronic Components Datasheet  

BC807-25W Datasheet

General Purpose Transistors

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BC807-25W, BC807-40W
General Purpose
Transistors
PNP Silicon
Features
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector − Emitter Voltage
Collector − Base Voltage
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
VCEO
VCBO
VEBO
IC
−45
−50
−5.0
−500
V
V
V
mAdc
Characteristic
Symbol
Max
Unit
Total Device Dissipation FR− 5 Board,
(Note 1) TA = 25°C
Thermal Resistance,
Junction−to−Ambient
PD
RqJA
460 mW
272 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 Board, 1 oz. Cu, 100 mm2.
http://onsemi.com
COLLECTOR
3
1
BASE
2
EMITTER
3
1
2
SC−70
CASE 419
STYLE 3
MARKING DIAGRAM
5x M G
G
1
5x = Device Code
x = B or C
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 4
1
Publication Order Number:
BC807−25W/D


  ON Semiconductor Electronic Components Datasheet  

BC807-25W Datasheet

General Purpose Transistors

No Preview Available !

BC807−25W, BC807−40W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Min Typ Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = −10 mA)
Collector −Emitter Breakdown Voltage
(VEB = 0, IC = −10 mA)
Emitter −Base Breakdown Voltage
(IE = −1.0 mA)
Collector Cutoff Current
(VCB = −20 V)
(VCB = −20 V, TJ = 150°C)
ON CHARACTERISTICS
V(BR)CEO
−45
V(BR)CES
−50
V(BR)EBO
−5.0
ICBO
− − −100
− − −5.0
V
V
V
nA
mA
DC Current Gain
(IC = −100 mA, VCE = −1.0 V)
(IC = −500 mA, VCE = −1.0 V)
Collector −Emitter Saturation Voltage
(IC = −500 mA, IB = −50 mA)
hFE
BC807−25, SBC807−25
160 − 400
BC807−40, SBC807−40
250 − 600
40 −
VCE(sat) − − −0.7
V
Base −Emitter On Voltage
(IC = −500 mA, VCE = −1.0 V)
SMALL−SIGNAL CHARACTERISTICS
VBE(on)
− − −1.2 V
Current −Gain − Bandwidth Product
(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz)
fT 100 − − MHz
Output Capacitance
(VCB = −10 V, f = 1.0 MHz)
Cobo
− 10 −
pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
BC807−25WT1G
SBC807−25T1G*
BC807−25WT3G
BC807−40WT1G
SBC807−40WT1G*
BC807−40WT3G
Specific Marking
5B
5C
Package
SC−70
(Pb−Free)
SC−70
(Pb−Free)
Shipping
3000 / Tape & Reel
10,000 / Tape & Reel
3000 / Tape & Reel
10,000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
http://onsemi.com
2


Part Number BC807-25W
Description General Purpose Transistors
Maker ON Semiconductor
Total Page 8 Pages
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