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BC857BTT1G
General Purpose Transistor
PNP Silicon
These transistors are designed for general purpose amplifier applications. They are housed in the SOT−416/SC−75 which is designed for low power surface mount applications.
Features
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable
• This is a Pb−Free Device
MAXIMUM RATINGS (TA = 25°C) Rating
Symbol Max Unit
Collector−Emitter Voltage Collector−Base Voltage Emitter−Base Voltage Collector Current − Continuous Collector Current − Peak THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC IC
−45 −50 −5.0 −100 −200
V V V mAdc mAdc
Characteristic
Symbol Max Unit
Total Device Dissipation,
FR−4 Board (Note 1)
TA = 25°C Derated above 25°C
PD 200 mW
1.
BC857BTT1G Datasheet
