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  ON Semiconductor Electronic Components Datasheet  

BD681G Datasheet

Plastic Medium-Power Silicon NPN Darlingtons

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BD675G, BD675AG,
BD677G, BD677AG,
BD679G, BD679AG, BD681G
Plastic Medium-Power
Silicon NPN Darlingtons
This series of plastic, medium−power silicon NPN Darlington
transistors can be used as output devices in complementary
general−purpose amplifier applications.
Features
High DC Current Gain
Monolithic Construction
Complementary to BD676, 676A, 678, 678A, 680, 680A, 682
BD677, 677A, 679, 679A are Equivalent to MJE 800, 801, 802, 803
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−Emitter Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
VCEO
45
60
80
100
Vdc
Collector−Base Voltage
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
VCBO
45
60
80
100
Vdc
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ TC = 25°C
Derate above 25°C
VEBO
IC
IB
PD
5.0
4.0
1.0
40
0.32
Vdc
Adc
Adc
W
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 55 to + 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Thermal Resistance, Junction−to−Case RqJC
Max
3.13
Unit
°C/W
http://onsemi.com
4.0 AMPERES
POWER TRANSISTORS
NPN SILICON
60, 80, 100 VOLTS, 40 WATTS
COLLECTOR 2, 4
BASE 3
EMITTER 1
123
TO−225
CASE 77−09
STYLE 1
MARKING DIAGRAMS
YWW
BD6xxG
YWW
BD6xxAG
BD6xx/BD6xxA = Device Code
x = 75, 77, 79, 81
Y = Year
WW = Work Week
G = Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2013
December, 2013 − Rev. 15
1
Publication Order Number:
BD675/D


  ON Semiconductor Electronic Components Datasheet  

BD681G Datasheet

Plastic Medium-Power Silicon NPN Darlingtons

No Preview Available !

BD675G, BD675AG, BD677G, BD677AG, BD679G, BD679AG, BD681G
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage, (Note 1)
(IC = 50 mAdc, IB = 0)
BD675G, BD675AG
BD677G, BD677AG
BD679G, BD679AG
BD681G
BVCEO
Vdc
45 −
60 −
80 −
100 −
Collector Cutoff Current
(VCE = Half Rated VCEO, IB = 0)
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100’C)
Emitter Cutoff Current
(VBE = 5.0 Vdc, IC = 0)
ON CHARACTERISTICS
DC Currert Gain, (Note 1)
(IC = 1.5 Adc,VCE = 3.0 Vdc)
BD675G, BD677G, BD679G, BD681G
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD675AG, BD677AG, BD679AG
ICEO
ICBO
IEBO
hFE
750
750
mAdc
500
mAdc
0.2
2.0
mAdc
2.0
Collector−Emitter Saturation Voltage, (Note 1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD677G, BD679G, BD681G
(IC = 2.0 Adc, IB = 40 mAdc)
BD675AG, BD677AG, BD679AG
VCE(sat)
Vdc
2.5
2.8
Base−Emitter On Voltage, (Note 1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD677G, BD679G, BD681G
(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD675AG, BD677AG, BD679AG
VBE(on)
Vdc
2.5
2.5
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
(IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
50
45
40
35
30
25
20
15
10
5.0
0
15
30 45 60 75 90 105 120 135 150
TC, CASE TEMPERATURE (°C)
Figure 1. Power Temperature Derating
165
5.0
2.0
1.0
0.5
0.2
0.1
0.05
1.0
BONDING WIRE LIMIT
THERMALLY LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
TC = 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
2.0 5.0 10 20
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 2. DC Safe Operating Area
100
http://onsemi.com
2


Part Number BD681G
Description Plastic Medium-Power Silicon NPN Darlingtons
Maker ON Semiconductor
Total Page 4 Pages
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