Full PDF Text Transcription for BSP16T1 (Reference)
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BSP16T1. For precise diagrams, and layout, please refer to the original PDF.
BSP16T1 Preferred Device High Voltage Transistors PNP Silicon Features •ăPb-Free Package is Available MAXIMUM RATINGS Rating Symbol Value Unit Collector‐Emitter Voltage C...
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e MAXIMUM RATINGS Rating Symbol Value Unit Collector‐Emitter Voltage Collector‐Base Voltage Emitter‐Base Voltage Collector Current Total Device Dissipation @ TA = 25°C (Note 1) VCEO VCBO VEBO IC PD -300 -350 -6.0 -100 1.5 Vdc Vdc Vdc mAdc W Storage Temperature Range PD -65 to °C +150 Junction Temperature TJ 150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
BSP16T1 Datasheet
