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BTA16-800CW3G - Triacs Silicon Bidirectional Thyristors

Download the BTA16-800CW3G datasheet PDF. This datasheet also covers the BTA16-600CW3G variant, as both devices belong to the same triacs silicon bidirectional thyristors family and are provided as variant models within a single manufacturer datasheet.

Features

  • Blocking Voltage to 800 V.
  • On-State Current Rating of 16 A RMS at 25°C.
  • Uniform Gate Trigger Currents in Three Quadrants.
  • High Immunity to dV/dt.
  • 1000 V/ms minimum at 125°C.
  • Minimizes Snubber Networks for Protection.
  • Industry Standard TO-220AB Package.
  • High Commutating dI/dt.
  • 8.5 A/ms minimum at 125°C.
  • Internally Isolated (2500 VRMS).
  • These Devices are Pb.
  • Free and are RoHS Compliant.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (BTA16-600CW3G_ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number BTA16-800CW3G
Manufacturer onsemi
File Size 105.18 KB
Description Triacs Silicon Bidirectional Thyristors
Datasheet download datasheet BTA16-800CW3G Datasheet

Full PDF Text Transcription

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BTA16-600CW3G, BTA16-800CW3G Triacs Silicon Bidirectional Thyristors Designed for high performance full−wave ac control applications where high noise immunity and high commutating di/dt are required. Features • Blocking Voltage to 800 V • On-State Current Rating of 16 A RMS at 25°C • Uniform Gate Trigger Currents in Three Quadrants • High Immunity to dV/dt − 1000 V/ms minimum at 125°C • Minimizes Snubber Networks for Protection • Industry Standard TO-220AB Package • High Commutating dI/dt − 8.
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