Datasheet Details
| Part number | BUL642D2 |
|---|---|
| Manufacturer | onsemi |
| File Size | 124.11 KB |
| Description | High Gain Bipolar NPN Transistor |
| Datasheet |
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| Part number | BUL642D2 |
|---|---|
| Manufacturer | onsemi |
| File Size | 124.11 KB |
| Description | High Gain Bipolar NPN Transistor |
| Datasheet |
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www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP).
Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application.
A new development process brings avalanche energy capability, making the device extremely rugged.
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