BUL642D2 - High Gain Bipolar NPN Transistor

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ON Semiconductor

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Part number	BUL642D2
Manufacturer	ON Semiconductor
File Size	124.11 KB
Description	High Gain Bipolar NPN Transistor
Datasheet	BUL642D2 Datasheet
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www.DataSheet4U.com BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor (H2BIP). Tight dynamic characteristics and lot to lot minimum spread (150 ns on storage time) make it ideally suitable for Light Ballast Application. A new development process brings avalanche energy capability, making the device extremely rugged. Features http://onsemi.

Published: Aug 1, 2010 |