C4002 Datasheet | onsemi

Features - High breakdown voltage. - Adoption of MBIT process. - Excellent h FE linearity. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Electrical Characteristics at Ta=25°C Conditions Parameter Symbol Conditions Collector Cutoff Current Emitter Cutoff Current DC Current Gain ICBO IEBO h FE VCB=300V, IE=0 VEB=4V, IC=0 VCE=10V, IC=50m A Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage f T VCE(sat) VCE=30V, IC=10m A IC=50m A, IB=5m A Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) IC=50m A, IB=5m A V(BR)CBO IC=10µA, IE=0 Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Output Capacitance V(BR)CEO V(BR)EBO Cob IC=1m A, RBE=∞ IE=10µA, IC=0 VCB=30V, f=1MHz Reverse Transfer Capacitance Cre - : The 2SC4002 is classified by 50m A h FE as follows : VCB=30V, f=1MHz Rank E h FE 60 to 120 100 to 200 Ratings 400 400 5 200 400 600 150 --55 to +150 Unit V V V m A m A m W °C °C min 60- 400...