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  ON Semiconductor Electronic Components Datasheet  

C4002 Datasheet

NPN Triple Diffused Planar Silicon Transistor

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2SC4002
Ordering number : ENN2960A
2SC4002
NPN Triple Diffused Planar Silicon Transistor
High-Voltage Driver Applications
Features
High breakdown voltage.
Adoption of MBIT process.
Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Electrical Characteristics at Ta=25°C
Conditions
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
ICBO
IEBO
hFE
VCB=300V, IE=0
VEB=4V, IC=0
VCE=10V, IC=50mA
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
fT
VCE(sat)
VCE=30V, IC=10mA
IC=50mA, IB=5mA
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
VBE(sat) IC=50mA, IB=5mA
V(BR)CBO IC=10µA, IE=0
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Output Capacitance
V(BR)CEO
V(BR)EBO
Cob
IC=1mA, RBE=
IE=10µA, IC=0
VCB=30V, f=1MHz
Reverse Transfer Capacitance
Cre
* : The 2SC4002 is classified by 50mA hFE as follows :
VCB=30V, f=1MHz
Rank
D
E
hFE 60 to 120 100 to 200
Ratings
400
400
5
200
400
600
150
--55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
min
60*
400
400
5
Ratings
typ
max
Unit
0.1 µA
0.1 µA
200*
70 MHz
0.6 V
1.0 V
V
V
V
4 pF
3 pF
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Rev.0 I Pwagwew1.oofn3seImwiw.cwo.omnsemi.com
Publication Order Number:
2SC4002/D


  ON Semiconductor Electronic Components Datasheet  

C4002 Datasheet

NPN Triple Diffused Planar Silicon Transistor

No Preview Available !

2SC4002
Continued from preceding page.
Parameter
Turn-ON Time
Turn-OFF Time
Symbol
ton
toff
Conditions
See specified test circuit.
See specified test circuit.
Ratings
min typ max
0.25
5.0
Unit
µs
µs
Package Dimensions
unit : mm
2003B
5.0
4.0
4.0
0.45
0.5
0.45 0.44
Switching Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
OUTPUT
VR
50
RB
+
100µF
RL
+
470µF
VCC=150V
VBE= --1V
10IB1= --10IB2=IC=50mA
RL=3k, RB=200at IC=50mA
123
1.3 1.3
1 : Emitter
2 : Collector
3 : Base
SANYO : NP
IC -- VBE
hFE -- IC
120 5
VCE=10V
VCE=10V
3
100 Ta=70°C
2
25°C
80 100 --30°C
7
60 5
3
40
2
20
0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
Base-to-Emitter Voltage, VBE – V ITR06235
VCE(sat) -- IC
2
IC / IB=10
1.0
7
5
3
2
0.1 Ta=70°C
7
5 25°C, --30°C
3
2
7 1.0
2 3 5 7 10
23
5 7 100
2
Collector Current, IC – mA
ITR06237
10
7
5
7 1.0
10
7
5
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC – mA
ITR06236
VBE(sat) -- IC
IC / IB=10
3
2
1.0
Ta= --30°C
7
5
25°C
3
70°C
2
7 1.0
2 3 5 7 10
2 3 5 7 100 2 3
Collector Current, IC – mA
ITR06238
Rev.0 I Page 2 of 3 I www.onsemi.com


Part Number C4002
Description NPN Triple Diffused Planar Silicon Transistor
Maker ON Semiconductor
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C4002 Datasheet PDF






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