C4002 transistor equivalent, npn triple diffused planar silicon transistor.
* High breakdown voltage.
* Adoption of MBIT process.
* Excellent hFE linearity.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-B.
Features
* High breakdown voltage.
* Adoption of MBIT process.
* Excellent hFE linearity.
Specifications
A.
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