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CAT24AA01 Datasheet

1-Kb and 2-Kb I2C CMOS Serial EEPROM

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CAT24AA01 pdf
CAT24AA01, CAT24AA02
1-Kb and 2-Kb I2C CMOS
Serial EEPROM
Description
The CAT24AA01/24AA02 are 1−Kb and 2−Kb CMOS Serial
EEPROM devices internally organized as 128x8/256x8 bits.
They feature a 16−byte page write buffer and support the Standard
(100 kHz), Fast (400 kHz) and Fast−Plus (1 MHz) I2C protocols.
In contrast to the CAT24C01/24C02, the CAT24AA01/24AA02
have no external address pins, and are therefore suitable in
applications that require a single CAT24AA01/02 on the I2C bus.
Features
Supports Standard, Fast and Fast−Plus I2C Protocol
1.7 V to 5.5 V Supply Voltage Range
16−Byte Page Write Buffer
Hardware Write Protection for Entire Memory
Schmitt Triggers and Noise Suppression Filters on I2C Bus Inputs
(SCL and SDA)
Low Power CMOS Technology
1,000,000 Program/Erase Cycles
100 Year Data Retention
Industrial Temperature Range
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
VCC
www.onsemi.com
TSOT−23
TD SUFFIX
CASE 419AE
PIN CONFIGURATIONS
TSOT−23
SCL
VSS
SDA
15
2
34
WP
VCC
(Top View)
MARKING DIAGRAM
SCL
CAT24AA01
CAT24AA02
WP
SDA
VSS
Figure 1. Functional Symbol
RSYM
RS = Device Code
Y = Production Year (Last Digit)
M = Production Month (1−9, O, N, D)
PIN FUNCTION
Pin Name
Function
SDA
Serial Data/Address
SCL Clock Input
WP Write Protect
VCC Power Supply
VSS Ground
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 10 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
May, 2015 − Rev. 5
1
Publication Order Number:
CAT24AA01/D


  ON Semiconductor Electronic Components Datasheet  

CAT24AA01 Datasheet

1-Kb and 2-Kb I2C CMOS Serial EEPROM

No Preview Available !

CAT24AA01 pdf
CAT24AA01, CAT24AA02
Table 1. ABSOLUTE MAXIMUM RATINGS
Parameters
Storage Temperature
Ratings
−65 to +150
Units
°C
Voltage on any Pin with Respect to Ground (Note 1)
−0.5 to +6.5
V
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. The DC input voltage on any pin should not be lower than −0.5 V or higher than VCC + 0.5 V. During transitions, the voltage on any pin may
undershoot to no less than −1.5 V or overshoot to no more than VCC + 1.5 V, for periods of less than 20 ns.
Table 2. REABILITY CHARACTERISTICS (Note 2)
Symbol
Parameter
Min Units
NEND (Note 3) Endurance
1,000,000
Program/Erase Cycles
TDR Data Retention
100 Years
2. These parameters are tested initially and after a design or process change that affects the parameter according to appropriate AEC−Q100
and JEDEC test methods.
3. Page Mode @ 25°C
Table 3. D.C. OPERATING CHARACTERISTICS (VCC = 1.7 V to 5.5 V, TA = −40°C to 85°C, unless otherwise specified.)
Symbol
Parameter
Test Conditions
Min Max Units
ICCR
Read Current
Read, fSCL = 400 kHz
0.5 mA
ICCW
Write Current
Write
1 mA
ISB Standby Current
All I/O Pins at GND or VCC
1 mA
IL I/O Pin Leakage
Pin at GND or VCC
1 mA
VIL Input Low Voltage
−0.5
VCC x 0.3
V
VIH Input High Voltage
VCC x 0.7
VCC + 0.5
V
VOL1
Output Low Voltage
VCC 2.5 V, IOL = 3.0 mA
0.4 V
VOL2
Output Low Voltage
VCC < 2.5 V, IOL = 1.0 mA
0.2 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Table 4. PIN IMPEDANCE CHARACTERISTICS (VCC = 1.7 V to 5.5 V, TA = −40°C to 85°C, unless otherwise specified.)
Symbol
Parameter
Conditions
Max Units
CIN (Note 2) SDA I/O Pin Capacitance
VIN = 0 V
8 pF
CIN (Note 2) Input Capacitance (other pins)
VIN = 0 V
6 pF
IWP (Note 4) WP Input Current
VIN < VIH
100 mA
VIN > VIH
1
4. When not driven, the WP pin is pulled down to GND internally. For improved noise immunity, the internal pull−down is relatively strong;
therefore the external driver must be able to supply the pull−down current when attempting to drive the input HIGH. To conserve power, as
the input level exceeds the trip point of the CMOS input buffer (~ 0.5 x VCC), the strong pull−down reverts to a weak current source.
www.onsemi.com
2


Part Number CAT24AA01
Description 1-Kb and 2-Kb I2C CMOS Serial EEPROM
Maker ON Semiconductor
Total Page 10 Pages
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