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  ON Semiconductor Electronic Components Datasheet  

CPH3356 Datasheet

Power MOSFET

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CPH3356 pdf
CPH3356
Power MOSFET
–20V, 137m, –2.5A, Single P-Channel
This Power MOSFET is produced using ON Semiconductor’s trench
technology, which is specifically designed to minimize gate charge and
low on resistance. This devices is suitable for applications with low gate
charge driving or low on resistance requirements.
Features
Low On-Resistance
1.8V drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Typical Applications
Load Switch
Motor Driver
SPECIFICATIONS
ABSOLUTE MAXIMUM RATING at Ta = 25°C (Note 1)
Parameter
Symbol
Value
Unit
Drain to Source Voltage
VDSS
20 V
Gate to Source Voltage
VGSS
±10 V
Drain Current (DC)
ID 2.5 A
Drain Current (Pulse)
PW 10μs, duty cycle 1%
IDP
10 A
Power Dissipation
When mounted on ceramic substrate
(900mm2 × 0.8mm)
PD
1W
Junction Temperature
Tj 150 °C
Storage Temperature
Tstg
55 to +150
°C
Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage
the device. If any of these limits are exceeded, device functionality should not
be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE RATINGS
Parameter
Junction to Ambient
When mounted on ceramic substrate
(900mm2 × 0.8mm)
Symbol
RθJA
Value
Unit
125 °C/W
www.onsemi.com
VDSS
20V
RDS(on) Max
137m@ 4.5V
203m@ 2.5V
323m@ 1.8V
ID Max
2.5A
ELECTRICAL CONNECTION
P-Channel
3
1
1 : Gate
2 : Source
3 : Drain
2
PACKING TYPE : TL
MARKING
TL
ORDERING INFORMATION
See detailed ordering and shipping
information on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2015
April 2015 - Rev. 2
1
Publication Order Number :
CPH3356/D


  ON Semiconductor Electronic Components Datasheet  

CPH3356 Datasheet

Power MOSFET

No Preview Available !

CPH3356 pdf
CPH3356
ELECTRICAL CHARACTERISTICS at Ta = 25°C (Note 2)
Parameter
Symbol
Conditions
Value
Unit
min typ max
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Gate Threshold Voltage
Forward Transconductance
Static Drain to Source On-State
Resistance
Input Capacitance
V(BR)DSS
IDSS
IGSS
VGS(th)
gFS
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1A
ID=1A, VGS=4.5V
ID=0.5A, VGS=2.5V
ID=0.1A, VGS=1.8V
20 V
1 μA
±10 μA
0.4 1.4 V
2.7 S
105 137 mΩ
145 203 mΩ
215 323 mΩ
250 pF
Output Capacitance
Reverse Transfer Capacitance
Coss
Crss
VDS=10V, f=1MHz
60 pF
45 pF
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
td(on)
tr
td(off)
tf
Qg
See specified Test Circuit
5.7 ns
11 ns
34 ns
20 ns
3.3 nC
Gate to Source Charge
Gate to Drain “Miller” Charge
Qgs VDS=10V, VGS=4.5V, ID=2.5A
Qgd
0.65 nC
0.72 nC
Forward Diode Voltage
VSD
IS=2.5A, VGS=0V
0.87
1.5 V
Note 2 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted.
Product performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.≤1%
G
VDD= --10V
ID= --1A
RL=10Ω
D VOUT
CPH3356
P.G 50Ω S
www.onsemi.com
2


Part Number CPH3356
Description Power MOSFET
Maker ON Semiconductor
Total Page 5 Pages
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