Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter
Symbol
Conditions
Drain to Source Voltage Gate to Source Voltage
VDSS VGSS
Drain Current (DC) Drain Current (Pulse) Power Dissipation
ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate (900mm20.8mm)
Junction Temperature
Tj
Storage Temperature
Tstg
This product is designed to “ESD immunity < 200V.
Full PDF Text Transcription for CPH3362 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
CPH3362. For precise diagrams, and layout, please refer to the original PDF.
Ordering number : ENA2321A CPH3362 Power MOSFET 100V, 1.7Ω, 0.7A, Single P-Channel http://onsemi.com Features On-resistance RDS(on)1=1.3Ω (typ) 4V drive Halogen f...
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om Features On-resistance RDS(on)1=1.3Ω (typ) 4V drive Halogen free compliance Specifications Absolute Maximum Ratings at Ta = 25C Parameter Symbol Conditions Drain to Source Voltage Gate to Source Voltage VDSS VGSS Drain Current (DC) Drain Current (Pulse) Power Dissipation ID IDP PW10s, duty cycle1% PD When mounted on ceramic substrate (900mm20.8mm) Junction Temperature Tj Storage Temperature Tstg This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Value 100 20 0.7 2.8 1 150 55 to +150 Unit V V A A W C C Stresses exceeding those listed in the Maximum Rat
CPH3362 Datasheet
