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CPH5541 Datasheet

Bipolar Transistor

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Ordering number : EN8223A
CPH5541
Bipolar Transistor
(–)30V, (–)3A, Low VCE(sat) Complementary Dual CPH5
http://onsemi.com
Applications
MOSFET gate drivers, relay drivers, lamp drivers, motor drivers
Features
Composite type with a PNP transistor and an NPN transistor contained in one package, facilitating high-density
mounting
Ultrasmall package facilitate miniaturization in end products. (0.9mm mounting height)
Specications ( ): PNP
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Conditions
PW10μs
Mounted on a ceramic board (600mm2×0.8mm)
Ratings
(--30)40
(--)30
(--)5
(--)700
(--)3
0.6
150
--55 to +150
Unit
V
V
V
mA
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7017A-006
2.9
5 43
1
0.95
2
0.4
0.15 CPH5541-TL-E
0.05
1 : Collector1
2 : Collector2
3 : Base2
4 : Emitter Common
5 : Base1
CPH5
Product & Package Information
• Package
: CPH5
• JEITA, JEDEC
: SC-74A, SOT-25
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TL
Electrical Connection
543
12
Semiconductor Components Industries, LLC, 2013
September, 2013
62712 TKIM/21005EA TSIM TB-00001169 No.8223-1/8


  ON Semiconductor Electronic Components Datasheet  

CPH5541 Datasheet

Bipolar Transistor

No Preview Available !

CPH5541
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)30V, IE=0A
VEB=(--)4V, IC=0A
VCE=(--)2V, IC=(--10)50mA
VCE=(--)2V, IC=(--)50mA
VCB=(--)10V, f=1MHz
IC=(--)200mA, IB=(--)10mA
IC=(--)200mA, IB=(--)10mA
IC=(--)10μA, IE=0A
IC=(--)1mA, RBE=
IE=(--)10μA, IC=0A
See specied Test Circuit.
Switching Time Test Circuit
PW=20μs
D.C.1%
INPUT
VR
IB1
IB2
RB
OUTPUT
RL
50Ω
++
220μF
470μF
VBE= --5V
VCC=12V
20IB1= --20IB2=IC=300mA
For PNP, minus sign is omitted.
min
(200)300
(--30)40
(--)30
(--)5
Ratings
typ
(520)540
(4.7)3.3
(--110)85
(--)0.9
35
(125)255
(25)40
max
(--)100
(--)100
(500)800
(--220)190
(--)1.2
Unit
nA
nA
MHz
pF
mV
V
V
V
V
ns
ns
ns
Ordering Information
Device
CPH5541-TL-E
Package
CPH5
Shipping
3,000pcs./reel
memo
Pb Free
No.8223-2/8


Part Number CPH5541
Description Bipolar Transistor
Maker ON Semiconductor
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CPH5541 Datasheet PDF






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