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  ON Semiconductor Electronic Components Datasheet  

CPH6314 Datasheet

P-Channel Silicon MOSFET

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CPH6314
Ordering number : ENN8236
CPH6314
Features
Low ON-resistance.
High-speed switching.
4V drive.
P-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10µs, duty cycle1%
Mounted on a ceramic board (1200mm20.8mm)
Ratings
--30
±20
--4
--16
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Marking : JQ
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Conditions
ID=--1mA, VGS=0
VDS=--30V, VGS=0
VGS=±16V, VDS=0
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
See specified Test Circuit.
min
--30
--1.2
2.5
Ratings
typ
max
Unit
V
--1 µA
±10 µA
--2.6 V
3.6 S
53 69 m
92 129 m
105 147 m
510 pF
115 pF
78 pF
11 ns
20 ns
40 ns
32 ns
Continued on next page.
© 2011, SCILLC. All rights reserved.
Jan-2011, Rev. 0
Downloaded from Arrow.com.
Rev.0 I Pwagwew1.oofn4seImwiw.cwo.omnsemi.com
Publication Order Number:
CPH6314/D


  ON Semiconductor Electronic Components Datasheet  

CPH6314 Datasheet

P-Channel Silicon MOSFET

No Preview Available !

Continued from preceding page.
Parameter
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Package Dimensions
unit : mm
2151B
0.4
6 54
12
0.95
2.9
3
CPH6314
Symbol
Qg
Qgs
Qgd
VSD
Conditions
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
VDS=--10V, VGS=--10V, ID=--4A
IS=--4A, VGS=0
Ratings
min typ max
Unit
11 nC
2.4 nC
1.7 nC
--0.86
--1.2 V
Switching Time Test Circuit
0.15
0.05
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
SANYO : CPH6
VIN
0V
--10V
VIN
PW=10µs
D.C.1%
G
VDD= --15V
ID= --2A
RL=7.5
D VOUT
CPH6314
P.G 50S
ID -- VDS
--4.0
--3.5 --3.5V
--3.0
--2.5
--3.0V
--2.0
--1.5
--1.0
--0.5 VGS= --2.5V
0
0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0
Drain-to-Source Voltage, VDS -- V IT04492
RDS(on) -- VGS
300
Ta=25°C
250
200
ID= --1A
150
--2A
100
50
ID -- VGS
--6
VDS= --10V
--5
--4
--3
--2
--1
0
0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 --4.5 --5.0
Gate-to-Source Voltage, VGS -- V IT04493
RDS(on) -- Ta
200
150
100 IDI=DID-=-1=-A-1--,A2VA, GV, SVG=GS-=-S4=-.-04-V-.51V0.0V
50
0
0 --2 --4 --6 --8 --10 --12 --14 --16
Gate-to-Source Voltage, VGS -- V IT04494
0
--60 --40 --20 0 20 40 60 80 100 120 140 160
Ambient Temperature, Ta -- °C
IT04495
Rev.0 I Page 2 of 4 I www.onsemi.com
Downloaded from Arrow.com.


Part Number CPH6314
Description P-Channel Silicon MOSFET
Maker ON Semiconductor
Total Page 4 Pages
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