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  ON Semiconductor Electronic Components Datasheet  

CPH6350 Datasheet

P-Channel Power MOSFET

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CPH6350 pdf
Ordering number : ENA1529B
CPH6350
P-Channel Power MOSFET
–30V, –6A, 43mΩ, Single CPH6
http://onsemi.com
Features
4V drive
Low ON-resistance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain to Source Voltage
Gate to Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--30
±20
--6
--24
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
12
0.95
3
0.4
Ordering & Package Information
Device
Package
Shipping
CPH6350-TL-E
CPH6
3,000pcs./
SC-74, SOT-26, SOT-457
reel
memo
Pb-Free
0.15 CPH6350-TL-E
CPH6350-TL-W
CPH6350-TL-W
CPH6
SC-74, SOT-26, SOT-457
3,000pcs./
reel
Pb-Free
and
Halogen Free
0.05
Packing Type: TL
Marking
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
Semiconductor Components Industries, LLC, 2013
August, 2013
82813 TKIM/71112 TKIM TC-00002780/80509PE TKIM TC-00002052 No. A1529-1/6


  ON Semiconductor Electronic Components Datasheet  

CPH6350 Datasheet

P-Channel Power MOSFET

No Preview Available !

CPH6350 pdf
CPH6350
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Drain to Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate to Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain to Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--3A
ID=--3A, VGS=--10V
ID=--1.5A, VGS=--4.5V
ID=--1.5A, VGS=--4V
VDS=--10V, f=1MHz
See specied Test Circuit.
VDS=--15V, VGS=--10V, ID=--6A
IS=--6A, VGS=0V
Switching Time Test Circuit
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --3A
RL=5Ω
D VOUT
CPH6350
P.G 50Ω S
min
--30
Ratings
typ
--1.2
5.4
33
58
61
600
145
110
7.4
27
62
45
13
1.8
3.2
--0.87
max
--1
±10
--2.6
43
82
86
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No. A1529-2/6


Part Number CPH6350
Description P-Channel Power MOSFET
Maker ON Semiconductor
Total Page 6 Pages
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