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CPH6429 - N-Channel Silicon MOSFET

Features

  • Low ON-resistance.
  • Ultrahigh-speed switching.
  • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Ratings 60 ±10 2 8 1.6 150 --55 to +15.

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Datasheet Details

Part number CPH6429
Manufacturer ON Semiconductor
File Size 90.75 KB
Description N-Channel Silicon MOSFET
Datasheet download datasheet CPH6429 Datasheet
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Full PDF Text Transcription

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CPH6429 Ordering number : ENN8081 CPH6429 N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Electrical Characteristics at Ta=25°C Conditions PW≤10µs, duty cycle≤1% Mounted on a ceramic board (1200mm2✕0.8mm) Ratings 60 ±10 2 8 1.
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