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CPH6445 Datasheet

N-Channel Power MOSFET

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Ordering number : ENA1532B
CPH6445
N-Channel Power MOSFET
60V, 3.5A, 117m, Single CPH6
http://onsemi.com
Features
4V drive
Low ON-resistance
Protection diode in
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10ms, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm)
Ratings
60
±20
3.5
14
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7018A-003
2.9
654
0.15 CPH6445-TL-E
CPH6445-TL-W
Product & Package Information
• Package
: CPH6
• JEITA, JEDEC
: SC-74, SOT-26, SOT-457
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
0.05
12
0.95
3
0.4
1 : Drain
2 : Drain
3 : Gate
4 : Source
5 : Drain
6 : Drain
CPH6
TL
Electrical Connection
1, 2, 5, 6
3
4
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
Semiconductor Components Industries, LLC, 2014
March, 2014
32514HK TC-00002973/61312TKIM/21710TKIM PE No. A1532-1/5


  ON Semiconductor Electronic Components Datasheet  

CPH6445 Datasheet

N-Channel Power MOSFET

No Preview Available !

CPH6445
Electrical Characteristics at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=1.5A
ID=1.5A, VGS=10V
ID=0.7A, VGS=4.5V
ID=0.7A, VGS=4V
VDS=20V, f=1MHz
See specified Test Circuit.
VDS=30V, VGS=10V, ID=3.5A
IS=3.5A, VGS=0V
min
60
Ratings
typ
1.2
1.2 2.0
92
120
132
310
40
25
6.0
5.5
27
13
6.8
1.1
1.4
0.85
max
1
±10
2.6
117
168
185
1.2
Unit
V
mA
mA
V
S
mW
mW
mW
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
Switching Time Test Circuit
VIN
10V
0V
VIN
PW=10ms
D.C.1%
G
VDD=30V
ID=1.5A
RL=20
D VOUT
CPH6445
P.G 50S
Ordering Information
Device
CPH6445-TL-E
CPH6445-TL-W
Package
CPH6
Shipping
3,000pcs./reel
memo
Pb-Free
Pb-Free and Halogen Free
No. A1532-2/5


Part Number CPH6445
Description N-Channel Power MOSFET
Maker ON Semiconductor
Total Page 5 Pages
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