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Complementary Silicon Power Transistors
D44VH10 (NPN), D45VH10 (PNP)
These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers for high power switching circuits.
Features
• Fast Switching • Key Parameters Specified @ 100 °C • Low Collector-Emitter Saturation Voltage • Complementary Pairs Simplify Circuit Designs • These Devices are Pb-Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter Base Voltage
Collector Current − Continuous
Collector Current − Peak (Note 1)
Total Power Dissipation @ TC = 25 °C Derate above 25 °C
VCEO VCEV VEB
IC ICM PD
80 100 7.0 15 20
83 0.