Datasheet Summary
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EB201/D High Cell Density MOSFETs
Low On- Resistance Affords New Design Options
Prepared by: Kim Gauen and Wayne Chavez ON Semiconductor http://onsemi.
ENGINEERING BULLETIN
Just a few years ago an affordable 60 V, 10 mΩ power transistor was a dream. After all, 10 mΩ is the resistance of about 20 cm of #22 gauge wire. Today a sub- 10 mΩ power MOSFET is not only available, it is housed in a standard TO- 220. Such are the advances that have occurred lately in “high cell density” power MOSFET technology. Furthermore, Motorola’s high cell density technology, HDTMOS®, brings other advantages such as greatly improved body diode performance. The technological advances are...