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ECH8308 Datasheet

P-Channel Power MOSFET

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Ordering number : ENA1182A
ECH8308
P-Channel Power MOSFET
–12V, –10A, 12.5mΩ, Single ECH8
http://onsemi.com
Features
Best suited for load switching
1.8V drive
Protection diode in
Low ON-resistance
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
--12
±10
--10
--40
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
ECH8308-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
JK
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
87 6 5
12 3 4
Semiconductor Components Industries, LLC, 2013
July, 2013
60612 TKIM/62508PE TIIM TC-00001486 No. A1182-1/7


  ON Semiconductor Electronic Components Datasheet  

ECH8308 Datasheet

P-Channel Power MOSFET

No Preview Available !

ECH8308
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=--1mA, VGS=0V
VDS=--12V, VGS=0V
VGS=±8V, VDS=0V
VDS=--6V, ID=--1mA
VDS=--6V, ID=--4.5A
ID=--4.5A, VGS=--4.5V
ID=--2A, VGS=--2.5V
ID=--1A, VGS=--1.8V
VDS=--6V, f=1MHz
See specied Test Circuit.
VDS=--6V, VGS=--4.5V, ID=--10A
IS=--10A, VGS=0V
Switching Time Test Circuit
VIN
0V
--4.5V
VIN
PW=10μs
D.C.1%
G
VDD= --6V
ID= --5A
RL=1.2Ω
D VOUT
ECH8308
P.G 50Ω S
min
--12
Ratings
typ
--0.4
12
21
9.2
14
22
2300
720
550
24
130
230
195
26
4.0
7.1
--0.79
max
--10
±10
--1.3
12.5
20
33
--1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ECH8308-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1182-2/7


Part Number ECH8308
Description P-Channel Power MOSFET
Maker ON Semiconductor
PDF Download

ECH8308 Datasheet PDF






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