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MOSFET – Power, P-Channel Single ECH8
-30 V, -9 A, 17 mW
ECH8310
Features
• 4 V Drive • Halogen free compliance • Protection diode in • This Device is Pb−Free, Halogen Free and RoHS Compliant
Specifications
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Symbol
Parameter
Conditions
Ratings
Unit
VDSS
Drain−to−Source Voltage
−30
V
VGSS
Gate−to−Source Voltage
±20
V
ID
Drain Current (DC)
−9
A
IDP
Drain Current
PW ≤ 10 ms,
−60
A
(Pulse)
duty cycle ≤ 1%
PD
Allowable Power When mounted
1.5
W
Dissipation
on ceramic
substrate (900 mm2 X 0.8 mm)
Tch
Channel
Temperature
150
°C
Tstg Storage Temperature
−55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device.