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ECH8310 - -30V -9A P-Channel Power MOSFET

Key Features

  • 4 V Drive.
  • Halogen free compliance.
  • Protection diode in.
  • This Device is Pb.
  • Free, Halogen Free and RoHS Compliant Specifications.

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Datasheet Details

Part number ECH8310
Manufacturer onsemi
File Size 150.81 KB
Description -30V -9A P-Channel Power MOSFET
Datasheet download datasheet ECH8310 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, P-Channel Single ECH8 -30 V, -9 A, 17 mW ECH8310 Features • 4 V Drive • Halogen free compliance • Protection diode in • This Device is Pb−Free, Halogen Free and RoHS Compliant Specifications ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Symbol Parameter Conditions Ratings Unit VDSS Drain−to−Source Voltage −30 V VGSS Gate−to−Source Voltage ±20 V ID Drain Current (DC) −9 A IDP Drain Current PW ≤ 10 ms, −60 A (Pulse) duty cycle ≤ 1% PD Allowable Power When mounted 1.5 W Dissipation on ceramic substrate (900 mm2 X 0.8 mm) Tch Channel Temperature 150 °C Tstg Storage Temperature −55 to +150 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.