ECH8315 - P-Channel Power MOSFET

onsemi

General Description

technology, which is specifically designed to low on resistance.

This devices is suitable for applications with low on resistance requirements.

Key Features

Low On.
Resistance.
4 V Drive.
ESD Diode.
Protected Gate.
Pb.
Free, Halogen Free and RoHS Compliant Typical.

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ECH8315 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	ECH8315
Manufacturer	onsemi
File Size	170.31 KB
Description	P-Channel Power MOSFET
Datasheet	ECH8315 Datasheet

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Other Datasheets by onsemi

Part Number	Description
ECH8310	-30V -9A P-Channel Power MOSFET
ECH8308	P-Channel Power MOSFET
ECH8309	P-Channel Power MOSFET
ECH8410	N-Channel Power MOSFET
ECH8419	N-Channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Power, Single, P-Channel -30 V, 25 mW, -7,5 A ECH8315 Description This Power MOSFET is produced using onsemi’s trench technology, which is specifically designed to low on resistance. This devices is suitable for applications with low on resistance requirements. Features • Low On−Resistance • 4 V Drive • ESD Diode−Protected Gate • Pb−Free, Halogen Free and RoHS Compliant Typical Applications • Load Switch • Protection Switch for Lithium−ion Battery • Motor Driver ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Value Unit Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (Pulse) PW ≤ 10 ms, duty cycle ≤ 1% VDSS −30 V VGSS ±20 V ID −7.5 A IDP −40 A Power Dissipation PD When mounted on ceramic substrate (900 mm2 x 0.8 mm) 1.