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  ON Semiconductor Electronic Components Datasheet  

ECH8410 Datasheet

N-Channel Power MOSFET

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Ordering number : ENA1331A
ECH8410
N-Channel Power MOSFET
30V, 12A, 10mΩ, Single ECH8
http://onsemi.com
Features
Low ON-resistance.
4V drive.
Halogen free compliance.
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
30
±20
12
60
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-002
Top View
2.9
85
ECH8410-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
KQ
TL Lot No.
1
0.65
4
0.3
Bottom View
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
87 6
5
12 3 4
1 : Source
2 : Source
3 : Source
4 : Gate
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Top view
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM TC-00002188/N2509PE TK IM TC-00002188 No. A1331-1/7


  ON Semiconductor Electronic Components Datasheet  

ECH8410 Datasheet

N-Channel Power MOSFET

No Preview Available !

ECH8410
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=6A
ID=6A, VGS=10V
ID=3A, VGS=4.5V
ID=3A, VGS=4V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=15V, VGS=10V, ID=12A
IS=12A, VGS=0V
Switching Time Test Circuit
VIN
10V
0V
PW=10μs
D.C.1%
VIN
G
VDD=15V
ID=6A
RL=2.5Ω
D VOUT
P.G 50Ω S ECH8410
min
30
Ratings
typ
1.2
7.5
7.5
13
15.5
1700
300
200
17
50
110
72
31
5.5
5.5
0.8
max
1
±10
2.6
10
18.2
22
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ECH8410-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1331-2/7


Part Number ECH8410
Description N-Channel Power MOSFET
Maker ON Semiconductor
PDF Download

ECH8410 Datasheet PDF






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