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ECH8501 - Bipolar Transistor

Key Features

  • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ. )@IC=2.5A PNP : VCE(sat)= --0.1V(typ. )@IC= -2.5A Halogen free compliance http://onsemi. com.
  • Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipat.

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Datasheet Details

Part number ECH8501
Manufacturer onsemi
File Size 402.81 KB
Description Bipolar Transistor
Datasheet download datasheet ECH8501 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1581A ECH8501 Bipolar Transistor (–)30V, (–)30A, Low VCE(sat) Complementary Dual ECH8 Features • • • Mounting height 0.9mm Composite type, facilitating high-density mounting Low collector-to-emitter saturation voltage NPN : VCE(sat)=0.075V(typ.)@IC=2.5A PNP : VCE(sat)= --0.1V(typ.)@IC= -2.5A Halogen free compliance http://onsemi.com • Specifications ( ): PNP Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Total Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC PT Tj Tstg PW≤1μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.