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ECH8601M - N-Channel Power MOSFET

Key Features

  • Low ON-resistance.
  • 2.5V drive.
  • Common-drain type.
  • Protection diode in.
  • Built-in gate protection resistor.
  • Best suited for LiB charging and discharging switch.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VG.

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Datasheet Details

Part number ECH8601M
Manufacturer onsemi
File Size 218.36 KB
Description N-Channel Power MOSFET
Datasheet download datasheet ECH8601M Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1174A ECH8601M N-Channel Power MOSFET 24V, 8A, 23mΩ, Dual ECH8 http://onsemi.com Features • Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in • Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1000mm2×0.8mm) 1unit When mounted on ceramic substrate (1000mm2×0.8mm) Ratings 24 ±12 8 60 1.5 1.