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  ON Semiconductor Electronic Components Datasheet  

ECH8653 Datasheet

N-Channel Power MOSFET

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Ordering number : ENA0851A
ECH8653
N-Channel Power MOSFET
20V, 7.5A, 20mΩ, Dual ECH8
http://onsemi.com
Features
Low ON-resistance
Best suited for LiB charging and discharging switch
Halogen free compliance
4V drive
Common-drain type
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
VDSS
VGSS
ID
IDP
PD
PT
Tch
Storage Temperature
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
Ratings
20
±10
7.5
40
1.4
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-003
Top View
2.9
85
ECH8653-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
WY
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
ECH8
Electrical Connection
8765
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
71112 TKIM/53007PE TIIM TC-00000702 No. A0851-1/7


  ON Semiconductor Electronic Components Datasheet  

ECH8653 Datasheet

N-Channel Power MOSFET

No Preview Available !

ECH8653
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=20V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=8V
ID=4A, VGS=4V
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=10V, VGS=8V, ID=7.5A
IS=7.5A, VGS=0V
Switching Time Test Circuit
VIN
8V
0V
VIN
PW=10μs
D.C.1%
G
VDD=10V
ID=4A
RL=2.5Ω
D VOUT
ECH8653
P.G 50Ω S
min
20
Ratings
typ
1.0
3.4 5.8
9 14
11 18
1280
170
105
13
48
94
36
18.5
2.7
3.1
0.82
max
1
±10
2.4
20
25
1.2
Unit
V
μA
μA
V
S
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Ordering Information
Device
ECH8653-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A0851-2/7


Part Number ECH8653
Description N-Channel Power MOSFET
Maker ON Semiconductor
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ECH8653 Datasheet PDF






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