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  ON Semiconductor Electronic Components Datasheet  

ECH8660 Datasheet

Power MOSFET

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Ordering number : ENA1358B
ECH8660
Power MOSFET
30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8
http://onsemi.com
Features
The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (1200mm2×0.8mm) 1unit
When mounted on ceramic substrate (1200mm2×0.8mm)
N-channel P-channel
30 --30
±20 ±20
4.5 --4.5
30 --30
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8660-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TF
Lot No.
TL
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
87 6 5
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
42512 TKIM/D2210 TKIM/N1908PE MSIM TC-00001695 No. A1358-1/8


  ON Semiconductor Electronic Components Datasheet  

ECH8660 Datasheet

Power MOSFET

No Preview Available !

Electrical Characteristics at Ta=25°C
ECH8660
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=2A
ID=2A, VGS=10V
ID=1A, VGS=4.5V
ID=1A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
VDS=10V, VGS=10V, ID=4.5A
IS=4.5A, VGS=0V
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2A
ID=--2A, VGS=--10V
ID=--1A, VGS=--4.5V
ID=--1A, VGS=--4V
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
VDS=--10V, f=1MHz
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
See specied Test Circuit.
VDS=--10V, VGS=--10V, ID=--4.5A
VDS=--10V, VGS=--10V, ID=--4.5A
VDS=--10V, VGS=--10V, ID=--4.5A
IS=--4.5A, VGS=0V
Switching Time Test Circuit
[N-channel]
[P-channel]
Ratings
min typ max
Unit
30
1.2
1 1.66
45
85
110
240
45
30
6.2
11
17
7.5
4.4
1.1
0.64
0.84
V
1 μA
±10 μA
2.6 V
S
59 mΩ
119 mΩ
155 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
--30
--1.2
2.5
4.2
45
71
82
430
105
75
7.5
26
45
35
10
2.0
2.5
--0.85
--1
±10
--2.3
59
100
115
--1.2
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
VIN
10V
0V
VIN
PW=10μs
D.C.1%
G
VDD=15V
ID=2A
RL=7.5Ω
D VOUT
VIN
0V
--10V
VIN
PW=10μs
D.C.1%
G
VDD= --15V
ID= --2A
RL=7.5Ω
D VOUT
ECH8660
P.G 50Ω S
ECH8660
P.G 50Ω S
No. A1358-2/8


Part Number ECH8660
Description Power MOSFET
Maker ON Semiconductor
PDF Download

ECH8660 Datasheet PDF






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