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ECH8660 - Power MOSFET

Features

  • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
  • 4V drive.
  • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch T.

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Datasheet preview – ECH8660

Datasheet Details

Part number ECH8660
Manufacturer ON Semiconductor
File Size 267.35 KB
Description Power MOSFET
Datasheet download datasheet ECH8660 Datasheet
Additional preview pages of the ECH8660 datasheet.

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Full PDF Text Transcription

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Ordering number : ENA1358B ECH8660 Power MOSFET 30V, 4.5A, 59mΩ, –30V, –4.5A, 59mΩ, Complementary Dual ECH8 http://onsemi.com Features • The ECH8660 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) 1unit When mounted on ceramic substrate (1200mm2×0.8mm) N-channel P-channel 30 --30 ±20 ±20 4.
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