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ECH8661 - Power MOSFET

Features

  • ON-resistance Nch: RDS(on)1=18mΩ(typ. ), Pch: ON-resistance RDS(on)1=30mΩ(typ. ).
  • The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting.
  • 4V drive.
  • Halogen free compliance.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Al.

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Datasheet Details

Part number ECH8661
Manufacturer ON Semiconductor
File Size 281.84 KB
Description Power MOSFET
Datasheet download datasheet ECH8661 Datasheet
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Full PDF Text Transcription

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Ordering number : ENA1777A ECH8661 Power MOSFET 30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8 http://onsemi.com Features • ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.) • The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and high-speed switching , thereby enablimg high-density mounting • 4V drive • Halogen free compliance • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.
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