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  ON Semiconductor Electronic Components Datasheet  

ECH8661 Datasheet

Power MOSFET

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Ordering number : ENA1777A
ECH8661
Power MOSFET
30V, 7A, 24mΩ, –30V, –5.5A, 39mΩ, Complementary Dual ECH8
http://onsemi.com
Features
ON-resistance Nch: RDS(on)1=18mΩ(typ.), Pch: ON-resistance RDS(on)1=30mΩ(typ.)
The ECH8661 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON-resistance and
high-speed switching , thereby enablimg high-density mounting
4V drive
Halogen free compliance
Protection diode in
Specications
Absolute Maximum Ratings at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (900mm2×0.8mm) 1unit
When mounted on ceramic substrate (900mm2×0.8mm)
N-channel P-channel
30 --30
±20 ±20
7 --5.5
40 --40
1.3
1.5
150
--55 to +150
Unit
V
V
A
A
W
W
°C
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating
Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
Package Dimensions
unit : mm (typ)
7011A-001
Top View
2.9
85
ECH8661-TL-H
0.15
0 to 0.02
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type : TL
Marking
TG
TL LOT No.
1
0.65
4
0.3
Bottom View
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain2
6 : Drain2
7 : Drain1
8 : Drain1
ECH8
Electrical Connection
87 6 5
1234
Semiconductor Components Industries, LLC, 2013
July, 2013
51612 TKIM/72110PE TKIM TC-00002431 No. A1777-1/9


  ON Semiconductor Electronic Components Datasheet  

ECH8661 Datasheet

Power MOSFET

No Preview Available !

ECH8661
Electrical Characteristics at Ta=25°C
Parameter
Symbol
[N-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
[P-channel]
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Drain-to-Source On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
V(BR)DSS
IDSS
IGSS
VGS(off)
| yfs |
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±16V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=3.5A
ID=3.5A, VGS=10V
ID=2A, VGS=4.5V
ID=2A, VGS=4V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specied Test Circuit.
VDS=15V, VGS=10V, ID=7A
IS=7A, VGS=0V
ID=--1mA, VGS=0V
VDS=--30V, VGS=0V
VGS=±16V, VDS=0V
VDS=--10V, ID=--1mA
VDS=--10V, ID=--2.5A
ID=--2.5A, VGS=--10V
ID=--1.5A, VGS=--4.5V
ID=--1.5A, VGS=--4V
VDS=--10V, f=1MHz
See specied Test Circuit.
VDS=--15V, VGS=--10V, ID=--5.5A
IS=--5.5A, VGS=0V
Ratings
min typ max
Unit
30
1.2
3.7
18
29
39
710
120
72
10
25
43
25
11.8
2.4
2.0
0.79
V
1 μA
±10 μA
2.6 V
S
24 mΩ
41 mΩ
55 mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
1.2 V
--30
--1.2
5.2
30
55
58
600
145
110
7.2
23
63
42
13
1.8
3.2
--0.82
--1
±10
--2.6
39
77
82
--1.2
V
μA
μA
V
S
mΩ
mΩ
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
No. A1777-2/9


Part Number ECH8661
Description Power MOSFET
Maker ON Semiconductor
PDF Download

ECH8661 Datasheet PDF






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