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Ordering number : ENA1185A
ECH8664R
N-Channel Power MOSFET
30V, 7A, 23.5mΩ, Dual ECH8
http://onsemi.com
Features
• Low ON-resistance • 2.5V drive • Common-drain type • Protection diode in
• Built-in gate protection resistor • Best suited for LiB charging and discharging switch • Halogen free compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS ID IDP PD PT Tch
Tstg
Conditions
PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (900mm2×0.8mm) 1unit When mounted on ceramic substrate (900mm2×0.8mm)
Ratings 30
±12 7
60 1.3 1.