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EFC4618R-P Datasheet

Power MOSFET

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EFC4618R-P
Power MOSFET
24V, 6A, 23m, Dual N-Channel
www.onsemi.com
Features
2.5V Drive
Best Suited for LiB Charging and Discharging Switch
Common-drain Type
ESD Diode - Protected Gate
Pb-Free, Halogen Free and RoHS Compliance
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Source-to-Source Voltage
Gate-to-Source Voltage
Source Current (DC)
Source Current (Pulse)
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VSSS
VGSS
IS
ISP
PT
Tch
Tstg
Conditions
PW10μs, duty cycle1%
When mounted on ceramic substrate (5000mm2×0.8mm)
Ratings
24
±12
6
60
1.6
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,
damage may occur and reliability may be affected.
Package Dimensions
unit : mm (typ)
7069-001
1.81
43
EFC4618R-P-TR
Product & Package Information
• Package
: EFCP
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 5,000 pcs./reel
Packing Type : TR
Marking
12
0.65
12
43
0.3
1 : Source1
2 : Gate1
3 : Gate2
4 : Source2
EFCP1818-4CC-037
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
October 2014 - Rev. 2
1
TR
Electrical Connection
1
Rg
2
Rg
3
Rg=200
4
FT
LOT No.
Publication Order Number :
EFC4618R-P/D


  ON Semiconductor Electronic Components Datasheet  

EFC4618R-P Datasheet

Power MOSFET

No Preview Available !

EFC4618R-P
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Source-to-Source Breakdown Voltage
Zero-Gate Voltage Source Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Static Source-to-Source On-State Resistance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Forward Source-to-Source Voltage
V(BR)SSS
ISSS
IGSS
VGS(off)
| yfs |
RSS(on)1
RSS(on)2
RSS(on)3
RSS(on)4
RSS(on)5
td(on)
tr
td(off)
tf
Qg
VF(S-S)
IS=1mA, VGS=0V
VSS=20V, VGS=0V
VGS=±8V, VSS=0V
VSS=10V, IS=1mA
VSS=10V, IS=3A
IS=3A, VGS=4.5V
IS=3A, VGS=4.0V
IS=3A, VGS=3.7V
IS=3A, VGS=3.1V
IS=3A, VGS=2.5V
Test Circuit 1
Test Circuit 1
Test Circuit 2
Test Circuit 3
Test Circuit 4
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
Test Circuit 5
See specified Test Circuit. Test Circuit 7
VSS=10V, VGS=4.5V, IS=6A
IS=3A, VGS=0V
Test Circuit 6
min
24
Ratings
typ
0.5
13.5
14
14.5
14.9
18.5
6.5
19.8
20.5
21
23
27
200
815
1840
1770
25.4
0.76
max
1
±10
1.3
23
24
25.5
30
35
1.2
Unit
V
mA
mA
V
S
mW
mW
mW
mW
mW
ns
ns
ns
ns
nC
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be
indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Device
EFC4618R-P-TR
Package
EFCP
Shipping
5,000pcs./reel
memo
Pb-Free and Halogen Free
Test circuits are example of measuring FET1 side
Test Circuit 1
VSSS / ISSS
S2
G2
Test Circuit 2
IGSS(+) / (--)
S2
G2
G1
Test Circuit 3
VGS(off)
S1
S2
G2
IT11565
G1
Test Circuit 4
| yfs |
S1
S2
G2
IT11566
10V 1mA
G1
G1
S1
IT11567
S1
IT11568
* Note: Connect the mesurement terminal reversely
if you want to measure the FET2 side.
www.onsemi.com
2


Part Number EFC4618R-P
Description Power MOSFET
Maker ON Semiconductor
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EFC4618R-P Datasheet PDF






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