EGP10F Datasheet PDF (High-Efficiency Rectifier) | Download ON Semiconductor EGP10F

EGP10F - High-Efficiency Rectifier

Download the EGP10F datasheet PDF (EGP10A included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for high-efficiency rectifier.

Description

AXIAL LEAD / DO

Electronic versions are uncontrolled except when accessed directly from the Document Repository.

Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.

Features

Superfast Recovery Time for High Efficiency.
Low Forward Voltage, High Current Capability.
Low Leakage Current.
High Surge Current Capability.

📥 Download Datasheet

EGP10F high-efficiency rectifier by ON Semiconductor - Datasheet Preview — Note: The manufacturer provides a single datasheet file (EGP10A-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	EGP10F
Manufacturer	onsemi
File Size	148.90 KB
Description	High-Efficiency Rectifier
Datasheet	EGP10F Datasheet

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Full PDF Text Transcription

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DATA SHEET www.onsemi.com Rectifier, High Efficiency, Glass Passivated, 1.0 A EGP10B - EGP10K Features  Superfast Recovery Time for High Efficiency  Low Forward Voltage, High Current Capability  Low Leakage Current  High Surge Current Capability ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) Symbol Parameter Value Unit IO If(surge) Average Rectified Current 0.375” lead length @ TL = 75_C Peak Forward Surge Current 8.3 ms single half−sine−wave Superimposed on rated load (JEDEC method) 1.0 A 30 A PD Total Device Dissipation Derate above 25_C 2.5 W 17 mWC IC Thermal Resistance, Junction to Ambient 50 TJ, TSTG Junction and Storage Temperature Range −65~150 C/W C Stresses exceeding those listed in the Maximum Ratings table may damage the device.

Published: Jan 11, 2022 |