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EMH1303 - P-Channel Power MOSFET

Key Features

  • Low ON-resistance.
  • 1.8V drive.
  • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) Ratings --12 ±10 --7 --28 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exc.

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Datasheet Details

Part number EMH1303
Manufacturer onsemi
File Size 421.86 KB
Description P-Channel Power MOSFET
Datasheet download datasheet EMH1303 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA0661A EMH1303 P-Channel Power MOSFET –12V, –7A, 23mΩ, Single EMH8 http://onsemi.com Features • Low ON-resistance • 1.8V drive • Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% Mounted on a ceramic board (1200mm2×0.8mm) Ratings --12 ±10 --7 --28 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied.