EMH1307 - P-Channel Power MOSFET

onsemi

Key Features

ON-resistance RDS(on)1 : 20mΩ(typ. ).
1.8V drive.
Protection diode in.
Input Capacitance Ciss=1100pF(typ. ).
Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic sub.

EMH1307 p-channel power mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	EMH1307
Manufacturer	onsemi
File Size	458.21 KB
Description	P-Channel Power MOSFET
Datasheet	EMH1307 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Ordering number : ENA1715A EMH1307 P-Channel Power MOSFET –20V, –6.5A, 26mΩ, Single EMH8 http://onsemi.com Features • ON-resistance RDS(on)1 : 20mΩ(typ.) • 1.8V drive • Protection diode in • Input Capacitance Ciss=1100pF(typ.) • Halogen free compliance Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature VDSS VGSS ID IDP PD Tch Storage Temperature Tstg Conditions PW≤10μs, duty cycle≤1% When mounted on ceramic substrate (1200mm2×0.8mm) Ratings --20 ±10 --6.5 --26 1.5 150 --55 to +150 Unit V V A A W °C °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only.