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  ON Semiconductor Electronic Components Datasheet  

ES1B Datasheet

Fast Rectifiers

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Features
For surface mount applications.
Glass passivated junction.
Low profile package.
Easy pick and place.
Built-in strain relief.
Superfast recovery times for
high efficiency.
ES1A - ES1D
SMA/DO-214AC
COLOR BAND DENOTES CATHODE
Fast Rectifiers
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
1A 1B 1C
VRRM
IF(AV)
Maximum Repetitive Reverse Voltage
50 100 150
Average Rectified Forward Current, @ TA=120°C
1.0
IFSM Non-repetitive Peak Forward Surge Current
8.3 ms Single Half-Sine-Wave
Tstg Storage Temperature Range
TJ Operating Junction Temperature
30
-50 to +150
-50 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1D
200
Thermal Characteristics
Symbol
Parameter
PD Power Dissipation
RθJA Thermal Resistance, Junction to Ambient*
RθJL Thermal Resistance, Junction to Lead*
*Device mounted on FR-4 PCB 0.013 mm.
Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
VF Forward Voltage @ 1.0 A
trr Reverse Recovery Time
IF = 0.5 A, IR = 1.0 A, IRR = 0.25 A
IR
Reverse Current @ rated VR
TA = 25°C
TA = 100°C
CT Total Capacitance
VR = 4.0 V, f = 1.0 MHz
1A
Value
1.47
85
35
Device
1B 1C
0.92
15
5.0
100
7.0
1D
Units
V
A
A
°C
°C
Units
W
°C/W
°C/W
Units
V
ns
µA
µA
pF
2010 Semiconductor Components Industries, LLC.
October-2017, Rev. 3
Publication Order Number:
ES1A/D


  ON Semiconductor Electronic Components Datasheet  

ES1B Datasheet

Fast Rectifiers

No Preview Available !

Typical Characteristics
1.5
1.25
1
0.75
0.5
0.25
RESISTIVE OR
INDUCTIVE LOAD
P.C.B. MOUNTED
ON 0.2 x 0.2"
(5.0 x 5.0 mm)
COPPER PAD AREAS
0
0 25 50 75 100 125 150 175
Ambient Temperature [ºC]
Figure 1. Forward Current Derating Curve
30
25
20
15
10
5
0
12
5 10 20
50 100
Number of Cycles at 60Hz
Figure 3. Non-Repetitive Surge Current
10
1
0.1
0.01
TA = 25º C
Pulse Width = 300µs
2% Duty Cycle
0.001
0.4 0.6 0.8 1 1.2 1.4
Forward Voltage, VF [V]
Figure 2. Forward Voltage Characteristics
1000
100
TA = 125ºC
10
TA = 75º C
1
TA = 25ºC
0.1
0
20 40 60 80 100 120 140
Percent of Rated Peak Reverse Voltage [%]
Figure 4. Reverse Current vs Reverse Voltage
50
NONINDUCTIVE
14
12
10
8
6
4
2
0
0.1
50
NONINDUCTIVE
1 10 100
Reverse Voltage, VR [V]
Figure 5. Total Capacitance
+0.5A
trr
DUT
50V
(approx)
50
NONINDUCTIVE
(-)
Pulse
Generator
(Note 2)
OSCILLOSCOPE
(Note 1)
(+)
0
-0.25A
NOTES:
1. Rise time = 7.0 ns max; Input impedance = 1.0 megaohm 22 pf.
2. Rise time = 10 ns max; Source impedance = 50 ohms.
-1.0A
1.0cm
SET TIME BASE FOR
5/ 10 ns/ cm
Reverse Recovery Time Characterstic and Test Circuit Diagram
www.onsemi.com
2


Part Number ES1B
Description Fast Rectifiers
Maker ON Semiconductor
Total Page 3 Pages
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