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FAD7171MX - High-Side Automotive Gate Driver

General Description

The FAD7171MX is a monolithic high side gate drive IC that can drive high

speed MOSFETs and IGBTs that operate up to +600 V.

conduction.

Key Features

  • Floating Channel for Bootstrap Operation to +600 V.
  • 4 A Sourcing and 4 A Sinking Current Driving Capability.
  • Common.
  • Mode dv/dt Noise.
  • Cancelling Circuit.
  • 3.3 V and 5 V Input Logic Compatible.
  • Output In.
  • phase with Input Signal.
  • Under.
  • Voltage Lockout for VBS.
  • 8.
  • SOIC Package, Case 751.
  • 07 (JEDEC MS.
  • 012, 0.150 inch Narrow Body).
  • AEC.
  • Q100 Qualified and PPAP Capable fo.

📥 Download Datasheet

Datasheet Details

Part number FAD7171MX
Manufacturer onsemi
File Size 163.89 KB
Description High-Side Automotive Gate Driver
Datasheet download datasheet FAD7171MX Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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600 V / 4 A, High-Side Automotive Gate Driver IC FAD7171MX Description The FAD7171MX is a monolithic high−side gate drive IC that can drive high−speed MOSFETs and IGBTs that operate up to +600 V. It has a buffered output stage with all NMOS transistors designed for high pulse current driving capability and minimum cross−conduction. onsemi’s high−voltage process and common−mode noise−canceling techniques provide stable operation of the high−side driver under high dv/dt noise circumstances. An advanced level−shift circuit offers high−side gate driver operation up to VS = −11 V for VBS = 15 V. The UVLO circuit prevents malfunction when VBS is lower than the specified threshold voltage.