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FAN3214 - Low-Side Gate Drivers

Download the FAN3214 datasheet PDF (FAN3213 included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for low-side gate drivers.

Description

The FAN3213 and FAN3214 dual 4 A gate drivers are designed to drive N channel enhancement mode MOSFETs in low

side switching applications by providing high peak current pulses during the short switching intervals.

They are both available with TTL input thresholds.

Features

  • Industry.
  • Standard Pin Out.
  • 4.5 to 18 V Operating Range.
  • 5 A Peak Sink/Source at VDD = 12 V.
  • 4.3 A Sink/2.8 A Source at VOUT = 6 V.
  • TTL Input Thresholds.
  • Two Versions of Dual Independent Drivers:.
  • Dual Inverting (FAN3213).
  • Dual Non.
  • Inverting (FAN3214).
  • Internal Resistors Turn Driver Off if No Inputs.
  • Miller Drive Technology.
  • 12 ns/9 ns Typical Rise/Fall Times with 2.2 nF Load.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (FAN3213-ONSemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number FAN3214
Manufacturer onsemi
File Size 824.04 KB
Description Low-Side Gate Drivers
Datasheet download datasheet FAN3214 Datasheet

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Full PDF Text Transcription

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Dual-4 A, High-Speed, Low-Side Gate Drivers FAN3213, FAN3214 Description The FAN3213 and FAN3214 dual 4 A gate drivers are designed to drive N−channel enhancement−mode MOSFETs in low−side switching applications by providing high peak current pulses during the short switching intervals. They are both available with TTL input thresholds. Internal circuitry provides an under−voltage lockout function by holding the output LOW until the supply voltage is within the operating range. In addition, the drivers feature matched internal propagation delays between A and B channels for applications requiring dual gate drives with critical timing, such as synchronous rectifiers. This also enables connecting two drivers in parallel to effectively double the current capability driving a single MOSFET.
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