FCA76N60N Datasheet - ON Semiconductor

N-Channel SupreMOS MOSFET

FCA76N60N Features

* RDS(on) = 28 mΩ (Typ. ) @ VGS = 10 V, ID = 38 A

* Ultra Low Gate Charge (Typ. Qg = 218 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 914 pF)

* 100% Avalanche Tested

* RoHS Compliant Application

* Solar Inverter

* AC-DC Power Suppl

FCA76N60N General Description

The SupreMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior .

FCA76N60N Datasheet (3.98 MB)