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FCD360N65S3R0 - N-Channel MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150_C.
  • Typ. RDS(on) = 310 mW.
  • Ultra Low Gate Charge (Typ. Qg = 18 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 173 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet preview – FCD360N65S3R0

Datasheet Details

Part number FCD360N65S3R0
Manufacturer ON Semiconductor
File Size 458.90 KB
Description N-Channel MOSFET
Datasheet download datasheet FCD360N65S3R0 Datasheet
Additional preview pages of the FCD360N65S3R0 datasheet.

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Full PDF Text Transcription

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FCD360N65S3R0 MOSFET – Power, N-Channel, SUPERFET III, Easy Drive 650 V, 10 A, 360 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150_C • Typ. RDS(on) = 310 mW • Ultra Low Gate Charge (Typ. Qg = 18 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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