N-Channel SuperFET II FRFET MOSFET
600 V, 76 A, 41 mΩ
Typical RDS(on) = 36 mΩ at VGS = 10 V, ID = 38 A
Typical Qg(tot) = 267 nC at VGS = 10V, ID = 38 A
Low Effective Output Capacitance (Typical Coss(eff.) = 720 nF)
100% Avalanche Tested
Qualified to AEC Q101
SuperFET® II MOSFET is ON Semiconductor’s brand-new high
voltage super-junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on-resistance
and lower gate charge performance. This technology is tailored
to minimize conduction loss, provide superior switching performance,
dv/dt rate and higher avalanche energy. Consequently SuperFETII is
very well suited for the Soft switching and Hard Switching topologies
like High Voltage Full Bridge and Half Bridge DC-DC, Interleaved
Boost PFC, Boost PFC for HEV-EV automotive.
SuperFET II FRFET® MOSFET’s optimized body diode reverse
recovery performance can remove additional component and
improve system reliability.
Automotive On Board Charger
Automotive DC/DC converter for HEV
Maximum Ratings TC = 25°C unless otherwise noted
Drain to Source Voltage
Gate to Source Voltage
Drain Current - Continuous (VGS=10)
Pulsed Drain Current
Single Pulse Avalanche Rating
Peak Diode Recovery dv/dt
Derate Above 25oC
Operating and Storage Temperature
Maximum Thermal Resistance Junction to Case
Maximum Thermal Resistance Junction to Ambient
TC = 25°C
See Fig 4
-55 to + 150
Package Marking and Ordering Information
1: Starting TJ = 25°C, L = 18mH, IAS = 15A, VDD = 100V during inductor charging and VDD = 0V during time in avalanche.
2: ISD ≤ 38A, di/dt ≤ 200 A/us, VDD ≤ 380V, starting TJ = 25°C.
3: RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance, where the case thermal reference is defined as the solder
presented here is
drain pins. RθJC is
on mounting on a 1
guaranteed by design,
in2 pad of 2oz copper.
The maximum rating
©2015 Semiconductor Components Industries, LLC.
August-2017, Rev. 2
Publication Order Number: