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FCH067N65S3 Datasheet

N-Channel MOSFET

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FCH067N65S3
MOSFET – Power, N-Channel,
SUPERFET III, Easy Drive
650 V, 44 A, 67 mW
Description
SUPERFET III MOSFET is ON Semiconductor’s brandnew high
voltage superjunction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low onresistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss, provides superior switching performance, and
withstand extreme dv/dt rate.
Consequently, SUPERFET III MOSFET Easy drive series helps
manage EMI issues and allows for easier design implementation.
Features
700 V @ TJ = 150°C
Typ. RDS(on) = 59 mW
Ultra Low Gate Charge (Typ. Qg = 78 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 715 pF)
100% Avalanche Tested
These Devices are PbFree and are RoHS Compliant
Applications
Telecom / Server Power Supplies
Industrial Power Supplies
UPS / Solar
www.onsemi.com
VDSS
650 V
RDS(ON) MAX
67 mW @ 10 V
ID MAX
44 A
D
G
S
POWER MOSFET
G DS
TO247 LONG LEADS
CASE 340CH
MARKING DIAGRAM
© Semiconductor Components Industries, LLC, 2017
August, 2019 Rev. 5
$Y&Z&3&K
FCH
067N65S3
$Y
&Z
&3
&K
FCH067N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Data Code (Year & Week)
= Lot
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
1
Publication Order Number:
FCH067N65S3/D


  ON Semiconductor Electronic Components Datasheet  

FCH067N65S3 Datasheet

N-Channel MOSFET

No Preview Available !

FCH067N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted)
Symbol
Parameter
FCH067N65S3F155
Unit
VDSS
VGSS
Drain to Source Voltage
Gate to Source Voltage
DC
AC (f > 1 Hz)
650
V
±30
V
±30
ID
IDM
EAS
IAS
EAR
dv/dt
Drain Current
Drain Current
Single Pulsed Avalanche Energy (Note 2)
Avalanche Current (Note 2)
Repetitive Avalanche Energy (Note 1)
MOSFET dv/dt
Continuous (TC = 25°C)
Continuous (TC = 100°C)
Pulsed (Note 1)
44*
28*
110*
1160
8.8
3.12
100
A
A
mJ
A
mJ
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
PD
Power Dissipation
(TC = 25°C)
Derate Above 25°C
312
W
2.5
W/°C
TJ, TSTG Operating and Storage Temperature Range
55 to +150
°C
TL
Maximum Lead Temperature for Soldering, 1/8from Case for 5 seconds
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
*Drain current limited by maximum junction temperature.
1. Repetitive rating: pulse width limited by maximum junction temperature.
2. IAS = 8.8 A, RG = 25 W, starting TJ = 25°C.
3. ISD 22 A, di/dt 200 A/ms, VDD 380 V, starting TJ = 25°C.
THERMAL CHARACTERISTICS
Symbol
Parameter
RqJC
RqJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient, Max.
FCH067N65S3F155
0.4
40
Unit
_C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
FCH067N65S3F155
FCH067N65S3
TO247 G03
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30 Units
www.onsemi.com
2



Part Number FCH067N65S3
Description N-Channel MOSFET
Maker ON Semiconductor
Total Page 3 Pages
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