FCH072N60F Datasheet - ON Semiconductor

N-Channel MOSFET

FCH072N60F Features

* 650 V @ TJ = 150°C

* Typ. RDS(on) = 65 mW

* Ultra Low Gate Charge (Typ. Qg = 165 nC)

* Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF)

* 100% Avalanche Tested

* This Device is Pb

* Free, Halide Free and is RoHS Compliant Application

FCH072N60F General Description

SUPERFET II MOSFET is onsemi’s brand *new high voltage super *junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on *resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior s.

FCH072N60F Datasheet (335.30 KB)