FCP099N65S3
Overview
- 700 V @ TJ = 150°C
- Typ. RDS(on) = 79 mW
- Ultra Low Gate Charge (Typ. Qg = 61 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 544 pF)
- 100% Avalanche Tested
- These Devices are Pb-Free and are RoHS Compliant
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| FCP099N65S3 | Inchange Semiconductor | N-Channel MOSFET |